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BAS16 / MMBD4148 / MMBD914
Document number: DS12003 Rev. 29 - 2
2 of 4
www.diodes.com
October 2013
? Diodes Incorporated
BAS16 / MMBD4148 / MMBD914
Maximum Ratings
(@TA
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage
VRM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75 V
RMS Reverse Voltage
VR(RMS)
53 V
Forward Continuous Current (Note 6)
IFM
300 mA
Average Rectified Output Current (Note 6)
IO
200 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0s
IFSM
2.0
1.0
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 6)
PD
350 mW
Thermal Resistance Junction to Ambient Air (Note 6)
R?JA
357 °C/W
Operating and Storage Temperature Range
TJ , TSTG
-65 to +150 °C
Electrical Characteristics
(@TA
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 7)
V(BR)R
75
?
V
IR
= 100μA
Forward Voltage
VF
?
0.715
0.855
1.0
1.25
V
IF
= 1.0mA
IF
= 10mA
IF
= 50mA
IF
= 150mA
Leakage Current (Note 7)
IR
?
1.0
50
30
25
μA
μA
μA
nA
VR
= 75V
VR
= 75V, T
J
= +150°C
VR
= 25V, T
J
= +150°C
VR
= 20V
Total Capacitance
CT
?
2.0 pF VR
= 0, f = 1.0MHz
Reverse Recovery Time
trr
?
4.0 ns IF
= I
R
= 10mA,
Irr = 0.1 x IR, RL
= 100
?
Notes: 6. Device mounted on glass epoxy PCB 1.6” x 1.6” x 0.06”; mounting pad for the cathode lead min. 0.93in2.
7. Short duration pulse test used to minimize self-heating effect.
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